Russell Ellwanger
Analyst · Drexel Hamilton. Please go ahead
Thank you, Noit. Welcome all of you to our conference call and thank you for joining us. We reported another strong quarter with record revenues of $355 million or $1.42 billion annualized run rate with incremental net profit margins strongly outpacing the revenue growth, demonstrating added value being provided to our customers and to our shareholders. We reported record EBITDA for the quarter at $109 million, up 12% over last year. GAAP net profit for the third quarter was $55 million, representing an increase of 8% year-over-year or 24% on an adjusted basis. For the fourth quarter of 2017 our guidance is $358 million plus or minus 5%, resulting in annual year-over-year growth of 11% of which 20% of that is organic business unit based growth. Oren will cover our financials in much more detail in a few minutes. Excluding the Panasonic and Maxim long-term contracts, which are committed and stable, another words considering only our business unit driven growth we recorded year-to-date organic growth of above 20% year-over-year. I’d now like to review the main activities in these various business units that will ensure mid to long-term growth and further cement our leading position in the relevant markets. In RF and high precision analog we’re investing in technology to address the next-generation of connected and smart devices. For wireless, we are focused to bring to market technology for upcoming 5G standards that will substantially increase mobile data transmission rates. This includes continuing our aggressive roadmap in RF SOI, but as well augmenting this with RF MEMS which promises to leapfrog RF SOI performance with switching speeds down to 50 femtoseconds or less to address the most demanding switching and tuning applications in smartphones and IoT terminals. 5G also includes a much higher frequency band 28 gigahertz versus less than 6 gigahertz which is used in today’s wireless communication systems. We are working with partners to demonstrate full chipsets with our high performance silicon-germanium technology that can achieve high data rates in this band. As we recently announced with UCSD we reach data rates of up to 12 gigabps. In infrastructure, we’re working to support the strong growth in global data traffic with continued roadmap in silicon-germanium technologies and fiber-optic communications networks and data sensors. We continue to see strong strength in the SiGe market and based on our customers forecast, we expect continued strong growth. This was driven primarily by data centers and cloud connectivity requirements. We expect this well through 2018 and beyond. Last quarter we announced initial developments of a silicon photonic platform that can augment our silicon-germanium offerings and increase our TAM in this growth area. We are making good progress. This quarter we demonstrated all components of the system including photo detectors, waveguides and modulators, and have initial customer prototype products taped into our factory well ahead of initial plans. In RF sensors we announced a very important partnership with DENSO Corporation in Japan, which is delivering RF radar systems built with our silicon-germanium technology for the Toyota Camry which was released earlier this summer in North American market. We see automotive radar as a good additional growth factor for our advanced silicon-germanium technology over the next several years has more vehicles or adopting the safety technology and the number of sensors per vehicle will be increasing from the three to seven today to perhaps as many as 12 which is predicted for a fully autonomous vehicle of the future. We are emphasizing all such partnerships. As we stated coming into this year, our RF focus is to engage in deals on those platforms we supply high value to our customers and hence will reduce the quantity of lower volume products where price rather than technology becomes a differentiator in favor of high end high value mix. Moving to power management and beginning with automotive segment. Most new cars include a wide variety of new technologies such as ADOS 48-volt battery architecture, headlight LED, advanced safety features, power savings and charging capabilities. Also the aggressive CO2 emission reduction targets in many countries are driving the need to develop more hybrid and EV vehicles. Examples can be the stop start systems, electric power steering and more which are using 48-volt operating voltages enabling the potential 10% to 15% gain in fuel economy. Our 0.18 micron 200-volt SOR power management platform serves the automotive power management needs with a very high breakdown voltage up to 200 volts combined with very high immunity to noise. This platform is qualified for consumer grade during the past quarter and automotive qualification is ongoing with very high overall market interest. To increase our footprint in the power management SOI market we continue to invest in development of next generations to include extended voltage ranges, reduced Rdson for better efficiency and die size, and a variety of different isolation options. Our second platform that we’ve invested in for automotive power management market is our [ph] reserve (7:27) technology that offers the best-in-class Rdson for voltages up to 80 volts. This technology will include also advanced isolation schemes allowing high current capabilities and negative voltages, while still maintaining smaller die size. The platform will be released by the end of this current year with customer designs in Q1 ‘18. The low-voltage 5-volt market mainly needed for consumer applications covers about 50% of the overall power management IC market and amounted to about $22 billion in product revenue in 2016 according to Markets & Markets reports. To address this highly competitive segment, we’ve recently introduced our 5 volt 65 nanometer technology at a 300 millimeter wafer size enabling a significantly better value proposition for our customers than our competitors 110 nanometer to 180 nanometer 200 millimeter platforms and is already in mass production. We are expanding the 65 nanometer 300 millimeter offering to support also higher voltage up to 20 volt operations and will benefit from best-in-class Rdson for improved efficiency, as well as a suite of low mass count embedded solutions at an overall low mass count flow, also supporting high-frequency switching speed. In parallel, we continue to maintain our leadership position with best-in-class Rdson across wide voltage ranges to support increased consumer and industrial markets needed for more efficient solutions. In the CMOS image sensor market we are investing today in technology for three main directions; next-generation global shutter technology for the industrial sensor market; Backside Illumination and stack wafers for the high-end photography market; and special pixel technology for the automotive market. In the industrial sensor market we are working with several leading customers on the development of the 2.5 micron state-of-the-art global shutter pixel on the 65 nanometer 300 millimeter wafer size platform. As you may recall, we previously announced the availability of our 2.8 micron global shutter pixel and 110 nanometer platforms, the smallest global shutter pixel in the world. This is still the case and our 2.5 micron pixel on the 65 nanometer 300 millimeter platform will continue our leadership in this area, providing an even smaller pixel and being then again lowest pixel size in the world and thus allowing higher sensor resolution for any given sensor size. The first tape out in this new platform is expected to happen by the end of this year. One of the most important parameters or figures of merit of global shutter pixels is the shutter efficiency. Our shutter efficiency gets to 100 DB, which is several orders of magnitude higher than the competing 3 micron pixel in the market. This combined with our stitching technology allows us to take a large portion of the high industrial market, as well as even use this technology for high end photography, especially for video applications. We believe that our current generation of global shutter technology on both 180 nanometer and 110 nanometer will continually grow, but will gradually be augmented and eventually replaced by this next-generation 300 millimeter technology enabling us to maintain our market edge for many years to come. In the digital SLR market we engage with one of the leaders in the world in the development of their next-generation sensors. And in parallel on track with our 300 millimeter Backside Illumination stack wafer technology development with outstanding pixel performance. Our first silicon runs of full stack wafer flow for the circuits on the bottom, CMOS wafer and the pixels are on the top CIS wafer show improvements of more than 2x and quantum efficiency with only slight increase of dark current in the 2.4 micron pixels. We expect to bring the dark current to the same outstanding level we already show in front side illumination about 10 electrons per second at 60 degree Celsius in the next silicon run. This technology will be ready for customer tape out in Q1 next year so customer designs are going to start very soon on this platform. Lastly in the automotive area, we have developed both SPAD Single Photon Avalanche Diodes state-of-the-art technology, as well as ultrafast global shutter pixels for automotive solid-state light hour based on time-of-flight principal. Our SPAD show very large dark -- very low dark signals at the same level as discrete SPAD devices, but with the advantage of full integration with CMOS circuits, allowing low-cost, low power consumption and system on chip capabilities. We have engaged with several companies among them one of the most promising in this area in the development of automotive light hour and expect to be a major player in this market in the future. In autonomous vehicle we will require multiple sensors or if you will sensor fusion, combining the capabilities of radar light hour and standard albeit advanced CMOS image sensors to accurately identify and enable real-time classification of all images within the field of view of interest. Our expertise in these three areas puts us in the strong position to take advantage of this anticipated high growth market. With regard to our TOPS business unit, the discrete power semiconductor industry is seeing the highest growth rates since 2012 and most likely we will continue to see a pronounced growth led by automotive applications in particular inverter powertrains used in electric and hybrid vehicles, as well as the need of power devices for 5-giga IoT base stations. Currently there are shortages of 8-inch diameter silicon wafers with discrete power devices. Our partners in TOPS projects Infineon previously International Rectifier, On Semi previous Fairchild and Vishay Siliconix are the leaders in the market and continuously widen their device portfolio with the state-of-the-art products, many of which are transferred from 6-inch to-8 inch wafers and have long-term high demand. Our success in discrete power device transfers to high volume production is due to our high level of engineering capability, enabling fast transfer in first time flow success, within an environment of process flow IP protection. This also attracts additional potential customers interested in the fabrication of state-of-the-art diodes and transistors, and joint development of novel device waivers with enhanced performance, including switching times, voltages, low dissipation and high voltage. These products include best in the world deeply scaled vertical high power MOSFETs, including integration and trench aspect ratios well beyond 10 to 1, advanced super junction diodes and transistors and also includes the most advanced protection devices in the world. Our strategy in discrete power devices is proven itself, namely to co-develop with leading strategic customers, their next-generation platforms, with intrinsic flexibility enabling numerous designs focused on the most challenging applications. In the sensor field TOPS activities are focused on the development of diverse sensor platforms also targeting automotive and mobile application. This includes a variety of the best-in-class magnetic field sensors based upon magnetic tunnel junction technology and using a novel principle of sensing enabling best-in-class sensitivity developed with Crocus Technologies. We are currently in the production ramp of these sensors including engagement with the Tier 1 automotive customer. High sensitivity radiation sensors, gamma rays, X-rays are being productized in radiation measurement systems by our partners and are employed in prestigious academic circles for medical and environmental studies. The obtained experience in sensor science is applied to other sensor fields, in particular to low-power sensors and sensor systems for environmental control, for example, gas sensing, temperature sensing, including devices suitable for operation in harsh environment. The developed production platforms employee novel device configuration and principles protected by TowerJazz intellectual property. As part of our sensor hub activities, a leading Israeli academy posted for us a Sensor Cubation Seminar where over 40 companies enter dialogue and showed strong interest in our sensor offerings and capabilities. Regarding current utilizations, as previously stated, our operational model is to run it around 85% utilization, which provides us with the best balance between line flow and wafer out. Utilization rates for the third quarter in Fab 1 Migdal Haemek, Israel our 6-inch factory we are at 91% utilization. Once again this is a very strong testimony to the long-term viability of our analog business and operational model as this Fab was built in 1983 and is running at even above the design utilization model. Fab 2 in Migdal Haemek, Israel our 8-inch factory was at 86% utilization. Fab 3 Newport Beach, California, another 8-inch factory was at 81% utilization. This is a bit lower than the usual utilization level of the Fab due to maintenance activities that were held during the quarter. The three TPSCo factories as a percent of total photo layers was about 58% utilization, 8% higher than the Q2 utilization with year-to-date doubling our third-party revenue in 2017 over 2016. Fab 9 our San Antonio factory was at 60% utilization. Turning to China, for our standard foundry business, China is our highest growth region, with over 80% year-over-year revenue growth against the base of multiple tens of millions and a continued strong growth forecast. With over 20 strong active customers being served with activities from all of our business units and in all of our Fabs excluding our 6-inch Fab 1 and as well many more Chinese customers in the sales funnel, China growth has both tactical and strategic importance to the company. Considering the government-backed semiconductor initiatives and the Chinese stated goals to develop a complete semiconductor infrastructure to serve their growing needs of IC manufacturing and IC integration we view it a strategically important to take part in this infrastructure build out as we had previously presented. Therefore we have been and continue to be active in exploring multiple opportunities to expand our presence there. In August, we were pleased to announce the framework agreement with Tacoma for new 8-inch semiconductor fabrication facility in Nanjing, China. As part of this project we will provide technological expertise together with operational integration consultation. To-date we’ve been paid $18 million, additional payments will be flushed out in the definitive agreement. With this opportunity, we can gain a strategic footprint in China, while extending our offerings and manufacturing capabilities. In addition, we recently announced a partnership with Yuanchen Microelectronics, a manufacturer for advanced CMOS image sensor backside elimination process for manufacturing in Changchun, China. This partnership allows us to provide our customers with advanced BSI technology in mass production for high end CMOS image sensors starting in mid-2018. This is the first time BSI will be offered by a foundry to the high end photography market, including large formats requiring stitching. The new BSI technology will be utilized for high end photography automotive, augmented and virtual reality sensors, as well as other growing CIS markets. We are excited with the potential from this partnership, which further enhances our leading CIS offerings. To summarize, we continue to focus on full circle value creation for our customers, partners, employees and shareholders. As we continue our lead in the analog semiconductor space, we are taking significant strides to increase our activities and capabilities and look to further our market potential and competitive advantages by investing and focusing on additional high growth high margin markets, as well as several disruptive technologies partnered with lead customers that can take a major share of new and emerging needs with these new breakthrough technologies. We look to provide our customers with the right platforms to support their needs to capitalize on the trends that are prevalent now, as well as those that are emerging, which are driving and will continue to drive the world for years to come. With that, I would like to turn the call over to our CFO, Mr. Oren Shirazi. Oren?