Sure. Maybe I’ll just give a quick GaN update. So just to remind everybody, we are today shipping, again, on silicon amplifiers and components, primarily for 4G and high reliability mobile radios, military manpack type radios. And that’s a very – these are very successful sockets that customers are really enjoying the performance of the products. I think over the next 12 months, we’ll see incremental growth within this product set.The second area, perhaps that you’ve alluded to, is our activity with – working with ST. That program continues. The recent update is the capital equipment is now moving towards ST. We are focused very much on really polishing the specifications that were Looking at in terms of process technology, as well as working with ST on schedules.We’ve recently done a complete review of pricing with ST to make sure we fully understand the cost of the technology when we’re at high volume production. And I think those conversations were very productive. And so that, that program is on schedule. I won’t go any further than that other than to remind everybody that this is a significant technology development.The third item is, I’ll point out regarding GaN-on, as we reorganized, we combined our traditional GaN-on-Silicon team with our group that was focused on bipolar transistors. We put them all under one organization and that has a benefit, because now we’re bringing a broader capability to the engineering team.We are also, I’ll point out, opening up the aperture slightly regarding our GaN-on-Silicon and GaN-on-Silicon carbide strategy. We’re now having our technologists do baseline characterization on different GaN-on-Silicon carbide transistors. We believe that there is a place for this technology in our portfolio, especially at the higher powers, the higher frequencies and some of our military and satellite customers are very interested in having MACOM participate here.So we are opening up the aperture and we’re bringing engineering efforts to really establish a baseline of where the industry is regarding, I’ll say half micron, 0.4 micron, as well as 0.25 and even 0.1 micron GaN-on-Silicon carbide. And so we believe over the long-term, our engineers should have access to the best technologies there are.As I mentioned, actually, on our last call, we have two foundries internally, but we also deal with nine external foundries. And so we want our power amplifier group to be able to have access to the best technologies. Now this will absolutely complement our GaN-on-Silicon efforts. We today still believe that GaN-on-Silicon is the right process for massive MIMO, given the volumes, given the price points and given the low power levels. So this is not going to take away from that effort, it will certainly be additive.