Kevin Conley
Analyst · Craig-Hallum
Thank you, Leanne, and good afternoon, everyone. Our Q3 results demonstrated meaningful progress from both revenue and operational perspective. Third quarter revenue increased to $11.5 million and exceeded the high end of our guidance, increasing 28% year-over-year. MRAM revenue, including both Toggle and STT-MRAM, grew 14% from the previous quarter, setting a new quarterly record. This progress comes from both improvements in the performance of our Toggle MRAM manufacturing, coupled with continued growth of STT-MRAM sales. To share some good news on the Toggle MRAM front, we have returned to baseline yield on Toggle production, at our Chandler facility as we exited the third quarter, demonstrating measurable results from our investments in our manufacturing capabilities. Our operations team remains focused on the performance of our manufacturing line in order to drive increased efficiencies and profitability of our Toggle MRAM production. We expect these investments in yield and productivity improvements on these core products to provide increasing benefits to our financial performance in the coming quarters. To further our efforts toward supporting long-term Toggle growth, we announced earlier this week that we have entered into a multiyear partnership with SilTerra, a world-class semiconductor manufacturing services company, located in Kulim, Malaysia. Through this partnership, Everspin will augment its production capacity to meet future demand for its Toggle MRAM products in the industrial, computing, medical and transportation markets, where fast, reliable and volatile memory is critical. Initial Toggle MRAM production at SilTerra is expected to start in calendar year 2020. This partnership is part of a three-way cooperative agreement between Everspin, SilTerra and Bosch Sensortec, which is a licensee of Everspin’s TMR sensor intellectual property. Let me emphasize that this is a complement to our existing Toggle MRAM manufacturing capacity in our Chandler facility. We continue to invest in this manufacturing line under the existing lease and manufacturing agreement with NXP. It is our intent to continue parallel operations of a diversified manufacturing base, once SilTerra has come online. I will now turn to some highlights on our STT-MRAM efforts. During our last earnings call, we discussed our participation in the MRAM Developer Day and Flash Memory Summit in August, which was a great platform for us to promote our STT-MRAM technology. During that week, IBM showcased their flash system 9100, all-flash array, which contained the NVMe flash core module that uses our 256-megabit STT-MRAM product. More recently, this same customer also made public that, that flash core module will be available in a second storage array product line, expanding the traction of our technology in this key account. Building on our FMS engagements, bolstered by our design wins in this high-profile customer, we’re gaining traction in new accounts that drive benefit from the same value drivers of our STT-MRAM in persistent write buffer applications. We see increasing technical engagements and have been designed into systems that we hope to be able to announce as design wins in the coming quarters. Another Flash Memory Summit highlight was our collaboration with SMART Modular. We continue to work closely with SMART on the marketing and sales of the STT-MRAM based nvNITRO storage accelerator and supporting proof of concept evaluations, a key step into data center deployments. Since August, we have seen increasing interest in evaluation activity with prospective customers, including evaluations by major financial institutions. We also now have opportunity outside the FinTech sector with a web service provider that operates its own data centers. We’re anticipating one or more proof of concepts for this high-performance storage accelerator to complete by year-end. We expect SMART Modular to make the U.2 form factor of the nvNITRO product line available before the end of this year, opening up new opportunities for this innovative product technology. In addition to the positive developments I’ve just highlighted on our 256-megabit STT device, we remain on track with the development of the 1-gigabit STT-MRAM device, with customer samples expected to be released next month. We believe this product will open up incremental opportunities with new customers and applications beyond what the 256-megabit part addresses. We continue to expect both products to be contributors to our future revenue growth, with 1-gigabit revenues layering on top of revenue from the 256-megabit product. One final comment before turning the call over to Jeff. We recently extended our joint development agreement with our partner, GLOBALFOUNDRIES. This extension adds one year to the partnership beyond the termination date of the original JDA. Under the new agreement, there is a revised cost-sharing structure that allows both GLOBALFOUNDRIES, and Everspin to each more efficiently manage the parallel development efforts on 22-nanometer FDX embedded and 28-nanometer discrete STT-MRAM technology, respectively. Given where we are in our 28-nanometer development, we believe, this revised agreement will help us reduce next year’s R&D expenses. This arrangement will benefit both companies and demonstrates the strong relationship we have with this strategically important partner. With that, I’d now like to turn the call over to Jeff, who will review the details of our third quarter results as well as provide our fourth quarter 2018 guidance. Jeff?