Thank you, Lon. I would like to start out with an overview of our recent progress on our proprietary and broadly patented B-TRAN technology. In early January, we announced that the company will concentrate its near-term activities and resources on five main areas of focus. One, advance the development of our bidirectional bipolar junction transistor, solid-state switch technology. Two, fabricate second-generation dies at a commercial domestic foundry. Three, provide packaged engineering samples for early adopters. Four, pursue government funding for device development and specific B-TRAN based demonstration projects, and five, pursue strategic customer and partner relationships to accelerate commercialization. During the second quarter, we completed successful testing on the second-generation design of our double-sided B-TRAN wafers. Our wafer testing provided repeatable test results to form the basis for the next generation design. Test results confirm the following critical performance metrics: successful bidirectional operation with symmetrical performance in both directions, forward voltage drop for our B-TRAN dies was measured at .2 to .3 volts consistent with our simulations. This value is substantially lower than the corresponding junction voltage drop of approximately 0.9 volts for an IGBT die. And measured breakdown voltages were up to 1,200 volts, the characteristic required for many commercial, industrial and military applications such as electric vehicles, renewable energy, industrial automation and data centers. These results are incorporated into our current wafer fabrication runs at two independent semiconductor fabrication facilities. In addition, we were able to evaluate several different die layouts designed to enhance manufacturability and performance. These changes will enable us to have a simplified wafer layout that should lead to higher yield, lead to shorter fabrication runs, provide packaged engineering samples for early adopters and pursue strategic customer and partner relationships to accelerate commercialization. B-TRAN dies are being packaged for use with a bidirectional driver to characterize switching performance. Additionally, the initial B-TRAN dies meet the criteria for Ideal Power's engineering prototype sampling program with initial samples expected to be delivered to potential partners in the fourth quarter of 2019. With respect to our B-TRAN patent portfolio, we now have 46 issued B-TRAN patents with 13 of those issued outside the United States. Our geographic coverage now includes China, Japan and Europe. Our B-TRAN patent portfolio also includes 35 patent filings that will enhance our coverage in the U.S., China, Japan and Europe and has the potential to expand our coverage to include Korea and India. In summary, we’ve made significant progress among our commercialization roadmap. We look forward to providing engineering samples for early adopters, strategic customers and partners as we accelerate on our commercial roadmap. I will now turn the floor over to our CFO, Tim Burns, to discuss the financial results. Tim.